Manufacturer Part Number
CSD88537NDT
Manufacturer
Texas Instruments
Introduction
High-performance dual N-channel MOSFET in a compact 8-SOIC package
Product Features and Performance
Optimized for high-frequency and high-efficiency switching applications
Low on-resistance and fast switching characteristics
Capable of handling high currents up to 15A per channel
Product Advantages
Reduced power losses and improved system efficiency
Small form factor for space-constrained designs
Reliable performance in wide temperature range of -55°C to 150°C
Key Technical Parameters
60V drain-to-source voltage (Vdss)
15mΩ maximum on-resistance (Rds(on)) at 8A, 10V
1400pF maximum input capacitance (Ciss) at 30V
18nC maximum gate charge (Qg) at 10V
Quality and Safety Features
RoHS3 compliant
Tape and reel packaging for automated assembly
Compatibility
Surface mount package (8-SOIC) for easy integration
Application Areas
Ideal for high-frequency and high-efficiency switching in power supplies, motor drives, and other power conversion applications
Product Lifecycle
Active product, no immediate plans for discontinuation
Replacement or upgrade options available from Texas Instruments
Key Reasons to Choose This Product
Exceptional performance and efficiency for high-power switching applications
Compact size and easy integration with surface mount package
Reliable operation across wide temperature range
Proven quality and safety with RoHS3 compliance
Availability of replacement and upgrade options from a trusted manufacturer