Manufacturer Part Number
CSD88584Q5DCT
Manufacturer
Texas Instruments
Introduction
The CSD88584Q5DCT is a high-performance N-channel MOSFET transistor array featuring the NexFET technology from Texas Instruments.
Product Features and Performance
Operates in the temperature range of -55°C to 150°C
Supports a maximum power of 12W
Configured as a 2 N-Channel (Half Bridge) transistor array
Drain-to-Source Voltage (Vdss) of 40V
Low On-Resistance (Rds(on)) of 0.95mΩ @ 30A, 10V
High Input Capacitance (Ciss) of 12400pF @ 20V
Low Threshold Voltage (Vgs(th)) of 2.3V @ 250A
Low Gate Charge (Qg) of 88nC @ 4.5V
Product Advantages
Excellent power efficiency due to low on-resistance
Compact and space-saving package
Reliable operation over a wide temperature range
High power handling capability
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 40V
On-Resistance (Rds(on)): 0.95mΩ @ 30A, 10V
Input Capacitance (Ciss): 12400pF @ 20V
Threshold Voltage (Vgs(th)): 2.3V @ 250A
Gate Charge (Qg): 88nC @ 4.5V
Power Dissipation: 12W
Quality and Safety Features
RoHS3 compliant
22-VSON-CLIP (5x6) package for surface mount
Compatibility
Suitable for a variety of power management and control applications
Application Areas
Switched-mode power supplies
Motor drives
Inverters
Power conversion circuits
Product Lifecycle
This product is currently in production and available for purchase.
Replacement or upgrade options may be available from Texas Instruments.
Key Reasons to Choose This Product
Excellent power efficiency and performance due to low on-resistance
Wide operating temperature range for reliable operation in diverse environments
Compact and space-saving package for efficient board layout
High power handling capability for demanding applications
Compatibility with a wide range of power management and control circuits
