Manufacturer Part Number
CSD88537ND
Manufacturer
Texas Instruments
Introduction
High-performance, low-resistance dual N-channel power MOSFET
Product Features and Performance
60V drain-to-source voltage
15mΩ on-resistance at 8A, 10V
15A continuous drain current at 25°C
1400pF input capacitance at 30V
18nC gate charge at 10V
-55°C to 150°C operating temperature range
1W maximum power dissipation
Product Advantages
Excellent efficiency and power density
Reduced conduction losses
Compact surface-mount package
Key Technical Parameters
Drain-to-source voltage: 60V
On-resistance: 15mΩ
Drain current: 15A
Input capacitance: 1400pF
Gate charge: 18nC
Operating temperature: -55°C to 150°C
Power dissipation: 2.1W
Quality and Safety Features
RoHS3 compliant
Suitable for high-reliability applications
Compatibility
Designed for a wide range of power management and control applications
Application Areas
Power supplies
Motor drives
Converters
Switches
Product Lifecycle
Currently available
No discontinuation or replacement plans announced
Key Reasons to Choose This Product
Excellent performance-to-size ratio
High efficiency and power density
Low on-resistance for reduced conduction losses
Wide operating temperature range
Compact and reliable surface-mount package
Suitable for a variety of power management and control applications
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