Manufacturer Part Number
CSD88599Q5DC
Manufacturer
Texas Instruments
Introduction
High-performance NexFET power MOSFET in a compact 22-VSON-CLIP (5x6) package
Designed for high-power density, high-efficiency applications
Product Features and Performance
60V drain-to-source voltage
1mOhm maximum on-resistance at 30A, 10V
4840pF maximum input capacitance at 30V
5V maximum gate threshold voltage at 250A
27nC maximum gate charge at 4.5V
Operates in the temperature range of -55°C to 150°C
Product Advantages
Excellent power density and efficiency
Compact and space-saving package
Reliable performance over a wide temperature range
Key Technical Parameters
60V drain-to-source voltage
1mOhm maximum on-resistance
4840pF maximum input capacitance
5V maximum gate threshold voltage
27nC maximum gate charge
Quality and Safety Features
RoHS3 compliant
Robust package design for reliable operation
Compatibility
Compatible with a wide range of high-power, high-efficiency applications
Application Areas
Switching power supplies
Motor drives
Industrial automation
Automotive electronics
Product Lifecycle
Currently in production
Replacements and upgrades may be available in the future
Several Key Reasons to Choose This Product
Excellent power density and efficiency for high-performance applications
Compact and space-saving package for design flexibility
Reliable performance over a wide temperature range
RoHS3 compliance for environmental sustainability
Compatibility with a wide range of high-power, high-efficiency applications
