Manufacturer Part Number
VWI15-12P1
Manufacturer
IXYS Corporation
Introduction
This product is a discrete semiconductor device, specifically an IGBT (Insulated Gate Bipolar Transistor) module, designed for use in three-phase inverter applications.
Product Features and Performance
NPT (Non-Punch-Through) IGBT technology
Standard input configuration
Three-phase inverter configuration
Input capacitance (Cies) of 600 pF at 25V
Collector-emitter breakdown voltage (max) of 1200V
Collector current (max) of 18A
Collector-emitter saturation voltage (max) of 2.7V at 15V, 10A
Collector current cut-off (max) of 500A
Operating temperature range of -40°C to 150°C (TJ)
Power rating of 90W
Product Advantages
Robust and reliable NPT IGBT design
Suitable for three-phase inverter applications
Compact and efficient ECO-PAC2 package
Wide operating temperature range
Key Technical Parameters
IGBT Type: NPT
Input Configuration: Standard
Three-Phase Inverter Configuration
Input Capacitance (Cies): 600 pF @ 25V
Collector-Emitter Breakdown Voltage (max): 1200V
Collector Current (max): 18A
Collector-Emitter Saturation Voltage (max): 2.7V @ 15V, 10A
Collector Current Cut-off (max): 500A
Quality and Safety Features
RoHS3 compliant
NTC thermistor for temperature monitoring
Compatibility
Suitable for use in three-phase inverter applications
Application Areas
Industrial motor drives
Renewable energy systems (solar, wind)
Uninterruptible power supplies (UPS)
General-purpose power conversion
Product Lifecycle
This product is an active and current offering from IXYS Corporation.
Replacement or upgrade options may be available, but no specific information is provided.
Key Reasons to Choose This Product
Robust and reliable NPT IGBT technology
Optimized for three-phase inverter applications
Compact and efficient ECO-PAC2 package
Wide operating temperature range
RoHS3 compliance and NTC thermistor for quality and safety