Manufacturer Part Number
MUBW50-06A8
Manufacturer
IXYS Corporation
Introduction
This product is a discrete semiconductor device, specifically an Insulated-Gate Bipolar Transistor (IGBT) module, designed for power conversion and control applications.
Product Features and Performance
Three-phase inverter with brake configuration
250 W maximum power rating
NPT IGBT technology
600 V collector-emitter breakdown voltage
75 A maximum collector current
3 V maximum collector-emitter saturation voltage at 15 V gate voltage and 50 A collector current
800 A maximum collector current (non-repetitive)
Operating temperature range of -40°C to 125°C
Product Advantages
Reliable and efficient power conversion
Suitable for a wide range of industrial applications
Robust design with thermal management capabilities
Compact and easy to integrate
Key Technical Parameters
Input capacitance: 2.8 nF at 25 V collector-emitter voltage
NTC thermistor for temperature monitoring
Quality and Safety Features
RoHS3 compliant
Chassis mount package for secure installation
Compatibility
This IGBT module is designed to be compatible with a variety of power electronics systems and applications.
Application Areas
Motor drives
Power inverters
Welding equipment
Induction heating
Industrial automation
Renewable energy systems
Product Lifecycle
The MUBW50-06A8 IGBT module is an active product and is not nearing discontinuation. Replacement or upgrade options may be available from the manufacturer or authorized distributors.
Key Reasons to Choose This Product
Reliable and efficient power conversion performance
Robust design with thermal management capabilities
Versatile and suitable for a wide range of industrial applications
Compliance with RoHS3 standards for environmental responsibility
Availability of technical support and product lifecycle management from the manufacturer
