Manufacturer Part Number
BSM50GD120DN2G
Manufacturer
Infineon Technologies
Introduction
This product is an IGBT (Insulated Gate Bipolar Transistor) module from Infineon Technologies, a leading manufacturer of power semiconductor solutions.
Product Features and Performance
Rated for a maximum power of 400 W
Full bridge configuration
Input capacitance (Cies) of 33 nF at 25 V
Collector-emitter breakdown voltage (BVCES) of 1200 V
Collector current (IC) rating of 78 A
On-state voltage (Vce(on)) of 3.7 V at 15 V gate voltage and 50 A collector current
Operating temperature range up to 150°C (TJ)
Product Advantages
High power density and efficiency
Robust design for reliable performance
Versatile full bridge configuration for various applications
Key Technical Parameters
Manufacturer Part Number: BSM50GD120DN2G
Package: Module
Voltage Collector Emitter Breakdown (Max): 1200 V
Current Collector (Ic) (Max): 78 A
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A
Input Capacitance (Cies) @ Vce: 33 nF @ 25 V
NTC Thermistor: No
Mounting Type: Chassis Mount
Quality and Safety Features
Robust design for reliable performance
High-quality components and manufacturing process
Compliance with relevant industry standards and regulations
Compatibility
This IGBT module is compatible with a wide range of power electronics applications, including motor drives, power inverters, and power conversion systems.
Application Areas
Industrial motor drives
Power inverters
Power conversion systems
Renewable energy applications
Product Lifecycle
This product is an active and widely used IGBT module in the market.
Replacement and upgrade options are available from Infineon Technologies.
Key Reasons to Choose This Product
High power density and efficiency
Robust and reliable design
Versatile full bridge configuration
Compatibility with a wide range of power electronics applications
Availability of replacement and upgrade options
Backed by Infineon Technologies, a leading manufacturer of power semiconductor solutions.
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