FS10R06VL4_B2 - Infineon Technologies

Manufacturer Part Number

FS10R06VL4_B2

Manufacturer

Infineon Technologies

Introduction

This product is a discrete semiconductor device, specifically an Insulated-Gate Bipolar Transistor (IGBT) module.

Product Features and Performance

Three-phase inverter configuration

Input capacitance of 550 pF at 25 V

Collector-emitter breakdown voltage of up to 600 V

On-state voltage drop (Vce(on)) of 2 V at 15 V gate voltage and 10 A collector current

Collector current (Ic) up to 16 A

Maximum power dissipation of 50 W

Operating temperature range of -40°C to 150°C

Product Advantages

Compact and efficient IGBT module design

Suitable for a wide range of industrial applications

Reliable performance and thermal management

Key Technical Parameters

Collector-emitter voltage (Vce): up to 600 V

Collector current (Ic): up to 16 A

Power dissipation: 50 W

Operating temperature range: -40°C to 150°C

Quality and Safety Features

Integrated NTC thermistor for temperature monitoring

Compliance with relevant safety and quality standards

Compatibility

This IGBT module is designed for use in various industrial applications, such as motor drives, power supplies, and renewable energy systems.

Application Areas

Industrial motor drives

Power supplies

Renewable energy systems

General industrial electronics

Product Lifecycle

This product is an active and widely available IGBT module. There are no immediate plans for discontinuation, and replacement or upgrade options may be available from the manufacturer.

Key Reasons to Choose This Product

Reliable and efficient performance

Wide operating temperature range

Compact and integrated design

Compatibility with a range of industrial applications

Availability and ongoing support from the manufacturer