Manufacturer Part Number
MWI200-06A8T
Manufacturer
IXYS Corporation
Introduction
This product is a Discrete Semiconductor, specifically a Transistor - IGBT - Module from IXYS Corporation.
Product Features and Performance
Power Rating: 675 W
IGBT Type: NPT (Non-Punch-Through)
Input Configuration: Standard
Three Phase Inverter
Input Capacitance (Cies) @ 25 V: 9 nF
Collector-Emitter Breakdown Voltage (Max): 600 V
Collector Current (Max): 225 A
Collector-Emitter Saturation Voltage (Max) @ 15 V, 200 A: 2.5 V
Collector Cutoff Current (Max): 1.8 mA
Product Advantages
High power handling capability
Robust NPT IGBT technology
Suitable for three-phase inverter applications
Key Technical Parameters
Package: E3
Mounting Type: Chassis Mount
RoHS Compliance: RoHS3 Compliant
Quality and Safety Features
Reliable IXYS manufacturing
Compatibility
Compatible with a wide range of three-phase inverter applications
Application Areas
Industrial motor drives
Power conversion equipment
Renewable energy systems
Product Lifecycle
This product is currently available and not nearing discontinuation.
Replacement or upgrade options may be available from IXYS.
Key Reasons to Choose This Product
High power rating of 675 W
Robust NPT IGBT technology for reliable performance
Suitable for three-phase inverter applications
Compact E3 package with chassis mount design
RoHS3 compliance for environmental compatibility
