Manufacturer Part Number
MWI15-12A7
Manufacturer
IXYS Corporation
Introduction
This product is a discrete semiconductor device belonging to the transistor-IGBT-module category.
Product Features and Performance
Three-phase inverter configuration
Insulated Gate Bipolar Transistor (IGBT) structure
Non-Punch Through (NPT) IGBT type
Standard input
Operating temperature range: -40°C to 125°C (TJ)
Maximum power: 140 W
Input capacitance (Cies): 1 nF @ 25 V
Collector-emitter breakdown voltage (max): 1200 V
Collector current (max): 30 A
Collector-emitter saturation voltage (max): 2.6 V @ 15 V, 15 A
Collector current cutoff (max): 900 A
Product Advantages
Robust and reliable performance
Wide operating temperature range
Suitable for three-phase inverter applications
Key Technical Parameters
IGBT Type: Non-Punch Through (NPT)
Configuration: Three Phase Inverter
Input Capacitance (Cies): 1 nF @ 25 V
Voltage Collector Emitter Breakdown (Max): 1200 V
Current Collector (Ic) (Max): 30 A
Vce(on) (Max) @ Vge, Ic: 2.6 V @ 15 V, 15 A
Current Collector Cutoff (Max): 900 A
Quality and Safety Features
RoHS3 compliant
Manufacturer's packaging: E2
Compatibility
Chassis mount
Application Areas
Suitable for three-phase inverter applications
Product Lifecycle
Not near discontinuation
Replacements and upgrades available
Key Reasons to Choose This Product
Robust and reliable performance
Wide operating temperature range
Suitable for three-phase inverter applications
RoHS3 compliant
Chassis mount compatibility
