Manufacturer Part Number
MWI100-12A8T
Manufacturer
IXYS Corporation
Introduction
This product is a discrete semiconductor device classified as a Transistor - IGBT - Module.
Product Features and Performance
Power rating of 640 W
IGBT type is NPT (Non-Punch Through)
Standard input configuration
Three phase inverter configuration
Input capacitance of 6.5 nF at 25 V collector-emitter voltage
Maximum collector-emitter breakdown voltage of 1200 V
No NTC thermistor
Maximum collector current of 160 A
Maximum collector-emitter saturation voltage of 2.6 V at 15 V gate-emitter voltage and 100 A collector current
Maximum collector cutoff current of 6.3 mA
Chassis mount package
Product Advantages
High power handling capability
Robust NPT IGBT design
Suitable for three phase inverter applications
Key Technical Parameters
Power rating: 640 W
IGBT type: NPT
Input configuration: Standard
Configuration: Three Phase Inverter
Input capacitance: 6.5 nF @ 25 V
Collector-emitter breakdown voltage: 1200 V
Collector current: 160 A max
Collector-emitter saturation voltage: 2.6 V @ 15 V, 100 A
Collector cutoff current: 6.3 mA max
Quality and Safety Features
RoHS3 compliant
Compatibility
E3 package
Application Areas
Suitable for three phase inverter applications
Product Lifecycle
No information on discontinuation or availability of replacements/upgrades
Several Key Reasons to Choose This Product
High power handling capability of 640 W
Robust NPT IGBT design
Suitable for three phase inverter applications
RoHS3 compliant
