Manufacturer Part Number
MWI150-06A8
Manufacturer
IXYS Corporation
Introduction
Discrete semiconductor product
IGBT (Insulated Gate Bipolar Transistor) module
Product Features and Performance
3-phase inverter configuration
NPT (Non-Punch Through) IGBT technology
600V collector-emitter breakdown voltage
170A maximum collector current
515W maximum power
-40°C to 125°C operating temperature range
5nF input capacitance (Cies) at 25V
5V maximum collector-emitter saturation voltage (Vce(on)) at 15V gate voltage and 150A collector current
Product Advantages
High power handling capacity
Wide operating temperature range
Low conduction losses
Compact and efficient design
Key Technical Parameters
IGBT type: NPT (Non-Punch Through)
Input configuration: Standard
Package: E3 chassis mount
RoHS compliance: RoHS3 compliant
Quality and Safety Features
No NTC (Negative Temperature Coefficient) thermistor
Designed for reliable and safe operation
Compatibility
Suitable for 3-phase inverter applications
Application Areas
Industrial motor drives
Power conversion systems
Renewable energy systems
Electric vehicles
Product Lifecycle
Current production model
Replacement or upgrade options may be available from the manufacturer
Key Reasons to Choose This Product
High power handling capability
Wide operating temperature range
Low conduction losses for improved efficiency
Compact and reliable design suitable for industrial applications
