Manufacturer Part Number
MWI100-06A8
Manufacturer
IXYS Corporation
Introduction
This product is a discrete semiconductor device, specifically an IGBT (Insulated-Gate Bipolar Transistor) module, part of the MWI100 series.
Product Features and Performance
3-phase inverter configuration
410W maximum power
Voltage rating of 600V
Current rating of 130A
Input capacitance of 4.3nF at 25V
On-state voltage of 2.5V at 15V gate, 100A collector current
Collector-emitter cutoff current of 1.2mA
Wide operating temperature range of -40°C to 125°C
Product Advantages
Robust NPT (Non-Punch-Through) IGBT technology
Efficient power conversion and control
Suitable for a variety of industrial and power electronics applications
Key Technical Parameters
IGBT type: NPT
Input: Standard
Configuration: Three Phase Inverter
Voltage Collector Emitter Breakdown (Max): 600V
Current Collector (Ic) (Max): 130A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 100A
Current Collector Cutoff (Max): 1.2mA
Quality and Safety Features
RoHS3 compliant
Manufacturer's packaging: E3
Compatibility
Chassis mount configuration
Application Areas
Industrial power electronics
Motor drives
Inverters
Power converters
Product Lifecycle
This product is an active and ongoing part of IXYS Corporation's IGBT module lineup.
Replacement and upgrade options may be available from the manufacturer.
Key Reasons to Choose This Product
Robust and reliable NPT IGBT technology
Efficient power conversion performance
Wide operating temperature range
Compact and versatile chassis mount design
Compliance with RoHS3 environmental standards
Ongoing support and availability from the manufacturer
