Manufacturer Part Number
MWI25-12E7
Manufacturer
IXYS Corporation
Introduction
Discrete Semiconductor Product
Transistor IGBT Module
Product Features and Performance
NPT IGBT Type
Three Phase Inverter Configuration
Input Capacitance (Cies) @ Vce: 2 nF @ 25 V
Voltage Collector Emitter Breakdown (Max): 1200 V
Current Collector (Ic) (Max): 52 A
Vce(on) (Max) @ Vge, Ic: 2.4 V @ 15 V, 25 A
Current Collector Cutoff (Max): 400 A
Product Advantages
High Power Density
Reliable Performance
Wide Operating Temperature Range
Key Technical Parameters
Power Max: 225 W
IGBT Type: NPT
Input: Standard
Configuration: Three Phase Inverter
Voltage Collector Emitter Breakdown (Max): 1200 V
NTC Thermistor: No
Mounting Type: Chassis Mount
Quality and Safety Features
Robust Design
Thermal Management Capabilities
Compatibility
Suitable for a variety of industrial and power applications
Application Areas
Industrial Motor Drives
Power Conversion Systems
Renewable Energy Systems
Uninterruptible Power Supplies (UPS)
Product Lifecycle
Current product model
Replacement or upgrade options available
Key Reasons to Choose This Product
High power handling capability
Reliable and efficient performance
Wide operating temperature range
Robust and thermally-managed design
Compatibility with diverse applications