Manufacturer Part Number
MWI300-12E9
Manufacturer
IXYS Corporation
Introduction
Discrete Semiconductor Product
Transistor IGBT Module
Product Features and Performance
NPT IGBT Type
Three-Phase Configuration
Input Capacitance (Cies) @ Vce: 22 nF @ 25 V
Voltage Collector Emitter Breakdown (Max): 1200 V
NTC Thermistor Included
Current Collector (Ic) (Max): 530 A
Vce(on) (Max) @ Vge, Ic: 2.4 V @ 15 V, 300 A
Current Collector Cutoff (Max): 1 mA
Product Advantages
High power handling capability up to 2100 W
Wide operating temperature range of -40°C to 125°C (TJ)
Robust NPT IGBT technology
Three-phase configuration for polyphase applications
Key Technical Parameters
Manufacturer's Packaging: E+
Package / Case: E+
Supplier Device Package: E+
Package: Box
Operating Temperature: -40°C ~ 125°C (TJ)
Power Max: 2100 W
IGBT Type: NPT
Input: Standard
Configuration: Three Phase
Quality and Safety Features
NTC Thermistor for temperature monitoring and protection
Compatibility
Compatible with a wide range of three-phase applications
Application Areas
Suitable for use in various power electronics and motor control applications, such as industrial drives, renewable energy systems, and power conversion equipment.
Product Lifecycle
Current product offering, no indication of discontinuation
Replacement and upgrade options may be available from the manufacturer
Key Reasons to Choose This Product
High power handling capability up to 2100 W
Wide operating temperature range of -40°C to 125°C (TJ)
Robust NPT IGBT technology for reliability
Three-phase configuration for polyphase applications
NTC Thermistor for temperature monitoring and protection
Compatible with a wide range of three-phase applications
