Manufacturer Part Number
MIO2400-17E10
Manufacturer
IXYS Corporation
Introduction
Discrete semiconductor product
Transistor IGBT Module
Product Features and Performance
IGBT type: NPT
Input: Standard
Configuration: Single Switch
Input Capacitance (Cies) @ Vce: 230 nF @ 25 V
Voltage Collector Emitter Breakdown (Max): 1700 V
NTC Thermistor: No
Current Collector (Ic) (Max): 2400 A
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 2400A
Current Collector Cutoff (Max): 120 mA
Mounting Type: Chassis Mount
Product Advantages
High current capacity
Low on-state voltage drop
Rugged and reliable design
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 1700 V
Current Collector (Ic) (Max): 2400 A
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 2400A
Quality and Safety Features
Operating Temperature: -40°C ~ 125°C (TJ)
Compatibility
Manufacturer's packaging: E10
Base Product Number: MIO
Package / Case: E10
Supplier Device Package: E10
Application Areas
Industrial power electronics
Motor drives
Welding equipment
Power supplies
Product Lifecycle
Current product offering, no discontinuation information available
Replacements or upgrades may be available from IXYS Corporation
Several Key Reasons to Choose This Product
High current capacity up to 2400 A
Low on-state voltage drop of 2.6V
Rugged and reliable NPT IGBT design
Wide operating temperature range of -40°C to 125°C
Compatibility with E10 package and chassis mount configuration