MIO1200-25E10 - IXYS

Manufacturer Part Number

MIO1200-25E10

Manufacturer

IXYS Corporation

Introduction

Discrete Semiconductor Product

IGBT Transistor Module

Product Features and Performance

IGBT Type: NPT (Non-Punch Through)

Input: Standard

Configuration: Single Switch

Input Capacitance (Cies) @ Vce: 186 nF @ 25 V

Voltage Collector Emitter Breakdown (Max): 2500 V

Current Collector (Ic) (Max): 1200 A

Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 1200A

Current Collector Cutoff (Max): 120 mA

Product Advantages

High current capability

High voltage rating

Low on-state voltage drop

Key Technical Parameters

Operating Temperature: -40°C ~ 125°C (TJ)

Packaging: E10 (Chassis Mount)

Quality and Safety Features

NTC Thermistor: No

Compatibility

Compatible with E10 package and chassis mount applications

Application Areas

Power electronics

Motor drives

Inverters

Converters

Product Lifecycle

The product is currently available and not nearing discontinuation.

Replacement or upgrade options may be available from the manufacturer.

Key Reasons to Choose This Product

High current and voltage handling capabilities

Low on-state voltage drop for efficient power conversion

Suitable for a wide range of power electronics applications

Reliable performance within the specified operating temperature range