MIO1200-33E11 - IXYS

Manufacturer Part Number

MIO1200-33E11

Manufacturer

IXYS Corporation

Introduction

Discrete Semiconductor Products

Transistors IGBTs Modules

Product Features and Performance

IGBT Type: NPT

Input: Standard

Configuration: Single Switch

Voltage Collector Emitter Breakdown (Max): 3300 V

NTC Thermistor: No

Current Collector (Ic) (Max): 1200 A

Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 1200A

Current Collector Cutoff (Max): 120 mA

Mounting Type: Chassis Mount

Operating Temperature: -40°C ~ 125°C (TJ)

Product Advantages

High voltage and high current capability

Reliable and robust design

Key Technical Parameters

Voltage Collector Emitter Breakdown (Max): 3300 V

Current Collector (Ic) (Max): 1200 A

Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 1200A

Current Collector Cutoff (Max): 120 mA

Quality and Safety Features

Reliable and robust design

Wide operating temperature range

Compatibility

Suitable for a variety of applications that require high voltage and high current capabilities

Application Areas

Power electronics

Motor drives

Industrial automation

Renewable energy systems

Product Lifecycle

Current product offering

Replacement or upgrade options may be available

Several Key Reasons to Choose This Product

High voltage and high current capability

Reliable and robust design

Wide operating temperature range

Suitability for various high-power applications