IXDN75N120 - IXYS

Manufacturer Part Number

IXDN75N120

Manufacturer

IXYS Corporation

Introduction

IGBT (Insulated Gate Bipolar Transistor) module

Designed for industrial power conversion applications

Product Features and Performance

Power rating: 660 W

IGBT type: NPT (Non-Punch Through)

Input type: Standard

Configuration: Single

Input capacitance (Cies): 5.5 nF @ 25 V

Collector-emitter breakdown voltage (max): 1200 V

Collector current (max): 150 A

Collector-emitter saturation voltage (max): 2.7 V @ 15 V, 75 A

Collector cutoff current (max): 4 mA

Operating temperature range: -40°C to 150°C (TJ)

Product Advantages

High power density

Reliable performance

Optimized for industrial power conversion applications

Key Technical Parameters

Voltage rating: 1200 V

Current rating: 150 A

Power rating: 660 W

Package: SOT-227B

Quality and Safety Features

RoHS3 compliant

Chassis mount design for secure installation

Compatibility

Suitable for industrial power conversion applications, such as motor drives, power supplies, and renewable energy systems

Application Areas

Industrial power conversion

Motor drives

Power supplies

Renewable energy systems

Product Lifecycle

Current production model

Replacements or upgrades may be available in the future

Key Reasons to Choose This Product

High power density and reliable performance

Optimized for industrial power conversion applications

RoHS3 compliant and chassis mount design for secure installation

Suitable for a wide range of industrial power conversion applications