Manufacturer Part Number
IXDR30N120D1
Manufacturer
IXYS Corporation
Introduction
High performance power IGBT (Insulated Gate Bipolar Transistor)
Designed for industrial and consumer power electronics applications
Product Features and Performance
High voltage capability up to 1200V
High current rating up to 50A
Low on-state voltage drop (Vce(on) max 2.9V @ 15V, 30A)
Fast switching performance with reverse recovery time of 40ns
Low gate charge of 120nC for efficient driving
High power handling capability up to 200W
Wide operating temperature range from -55°C to 150°C
Product Advantages
Excellent electrical characteristics for efficient and reliable power conversion
Compact ISOPLUS247 package for high power density design
Suitable for various power electronics applications
Key Technical Parameters
Collector-Emitter Voltage (VCE(max)): 1200V
Collector Current (IC(max)): 50A
On-State Voltage Drop (VCE(on)): 2.9V @ 15V, 30A
Reverse Recovery Time (trr): 40ns
Gate Charge (Qg): 120nC
Quality and Safety Features
RoHS 3 compliant
Robust ISOPLUS247 package for reliable operation
Compatibility
Compatible with various power electronics applications
Application Areas
Motor drives
Switching power supplies
Inverters
Welding equipment
Industrial automation and control
Product Lifecycle
This product is currently available and not nearing discontinuation
Replacement or upgrade options may be available from the manufacturer
Several Key Reasons to Choose This Product
High voltage and current handling capability for efficient power conversion
Fast and efficient switching performance for high-speed power electronics
Compact and robust package design for reliable operation
Wide operating temperature range for versatile applications
RoHS 3 compliance for environmental friendliness