APT45GP120J - Microchip Technology

Manufacturer Part Number

APT45GP120J

Manufacturer

Microchip Technology

Introduction

This product is a discrete semiconductor device, specifically an IGBT (Insulated Gate Bipolar Transistor) module from Microchip Technology's POWER MOS 7 series.

Product Features and Performance

IGBT Type: PT (Punch-Through)

Input: Standard

Configuration: Single

Input Capacitance (Cies): 3.94 nF @ 25 V

Collector-Emitter Breakdown Voltage (Max): 1200 V

Collector Current (Max): 75 A

Collector-Emitter Saturation Voltage (Max): 3.9 V @ 15 V, 45 A

Collector Cutoff Current (Max): 500 A

Operating Temperature Range: -55°C to 150°C (TJ)

Power Rating (Max): 329 W

Product Advantages

Robust and reliable IGBT performance

Suitable for a wide range of power conversion applications

Efficient power handling capabilities

Key Technical Parameters

Manufacturer Part Number: APT45GP120J

Package: ISOTOP

RoHS Compliance: RoHS3 Compliant

Quality and Safety Features

Manufacturer's packaging: ISOTOP

Mounting Type: Chassis Mount

Compatibility

This IGBT module is compatible with various power conversion and control applications.

Application Areas

Power converters

Motor drives

Welding equipment

Induction heating

Industrial automation

Renewable energy systems

Product Lifecycle

The APT45GP120J is an active product in Microchip Technology's portfolio. Replacement or upgrade options may be available in the future.

Key Reasons to Choose This Product

Robust and reliable IGBT performance

Efficient power handling capabilities

Suitable for a wide range of power conversion applications

Compliant with RoHS3 regulations

Chassis mount design for secure installation