Manufacturer Part Number
APT46GA90JD40
Manufacturer
Microchip Technology
Introduction
High-performance insulated-gate bipolar transistor (IGBT) module designed for industrial and automotive applications
Product Features and Performance
Operates at high-power, high-frequency, and high-efficiency
Offers fast switching and low conduction losses
Provides reliable and robust performance
Product Advantages
Improved thermal management
Enhanced electrical and mechanical characteristics
Optimized for demanding applications
Key Technical Parameters
Operating temperature range: -55°C to 150°C
Maximum power: 284W
IGBT type: PT (Punch-Through)
Input configuration: Standard, single
Input capacitance (Cies): 4.17nF @ 25V
Collector-emitter breakdown voltage (max): 900V
Collector current (max): 87A
Collector-emitter saturation voltage (max): 3.1V @ 15V, 47A
Collector current cutoff (max): 350A
Quality and Safety Features
RoHS3 compliant
Designed for reliability and durability
Compatibility
Suitable for industrial and automotive applications
Application Areas
Power conversion and control systems
Motor drives
Inverters
Welding equipment
Uninterruptible power supplies (UPS)
Product Lifecycle
This product is currently in active production and is not nearing discontinuation.
Replacement or upgrade options are available from the manufacturer.
Key Reasons to Choose This Product
Excellent power handling and efficiency
Robust and reliable performance
Wide operating temperature range
Optimized for demanding industrial and automotive applications
Availability of technical support and product documentation from the manufacturer