Manufacturer Part Number
CM600HU-24F
Manufacturer
Powerex, Inc.
Introduction
High power density insulated gate bipolar transistor (IGBT) module for industrial applications.
Product Features and Performance
Trench IGBT technology for low conduction and switching losses
Optimized internal layout for low stray inductance
High power density with 2400W max power rating
Wide operating temperature range of -40°C to 150°C
Low input capacitance of 230nF @ 10V
High collector-emitter breakdown voltage of 1200V
High collector current rating of 600A
Low collector-emitter saturation voltage of 2.4V @ 15V, 600A
Product Advantages
Efficient power conversion with low losses
Compact and space-saving design
Reliable operation in harsh environments
Suitable for a wide range of industrial applications
Key Technical Parameters
IGBT Type: Trench
Input Configuration: Single
Input Capacitance (Cies): 230nF @ 10V
Collector-Emitter Breakdown Voltage: 1200V
Collector Current (Max): 600A
Collector-Emitter Saturation Voltage: 2.4V @ 15V, 600A
Quality and Safety Features
RoHS compliant
No built-in NTC thermistor
Compatibility
Suitable for industrial applications requiring high-power, high-voltage, and high-current semiconductor devices
Application Areas
Motor drives
Power inverters
Uninterruptible power supplies (UPS)
Welding equipment
Industrial automation and control systems
Product Lifecycle
This product is currently in active production and not nearing discontinuation.
Replacement or upgraded models may be available in the future as technology advances.
Key Reasons to Choose This Product
Efficient power conversion with low losses for improved system efficiency
Compact and space-saving design for easy integration into industrial equipment
Reliable operation in harsh environments due to wide temperature range and robust construction
Suitable for a wide range of high-power, high-voltage, and high-current industrial applications
