Manufacturer Part Number
MII75-12A3
Manufacturer
IXYS Corporation
Introduction
Discrete Semiconductor Product
Transistors IGBTs Modules
Product Features and Performance
RoHS3 Compliant
Package: Y4-M5
Operating Temperature: -40°C ~ 150°C (TJ)
Power Handling: 370 W
IGBT Type: NPT
Input: Standard
Configuration: Half Bridge
Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
Voltage Collector Emitter Breakdown (Max): 1200 V
Current Collector (Ic) (Max): 90 A
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A
Current Collector Cutoff (Max): 4 mA
Mounting Type: Chassis Mount
Product Advantages
High power handling
Wide operating temperature range
Compact package
Key Technical Parameters
Power Handling: 370 W
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage Collector Emitter Breakdown (Max): 1200 V
Current Collector (Ic) (Max): 90 A
Quality and Safety Features
RoHS3 Compliant
Compatibility
Compatible with various industrial and power electronics applications
Application Areas
Industrial and power electronics applications
Product Lifecycle
Current model, no discontinuation or replacement information available
Key Reasons to Choose This Product
High power handling capacity
Wide operating temperature range
Compact and efficient package design
RoHS3 compliant for environmental safety
BSM200GA120DN2FSInfineon TechnologiesIGBT MODULE
CM300DY-12NFPowerex Inc.IGBT MOD 600V 300A 780W
APT50GT120JU3Microchip TechnologyIGBT MOD 1200V 75A 347W SOT227