MII100-12A3 - IXYS

Manufacturer Part Number

MII100-12A3

Manufacturer

IXYS Corporation

Introduction

Discrete Semiconductor Product

Transistor IGBT Module

Product Features and Performance

RoHS3 Compliant

Manufacturer's Packaging: Y4-M5

Base Product Number: MII100

Package / Case: Y4-M5

Supplier Device Package: Y4-M5

Package: Bulk

Operating Temperature: -40°C ~ 150°C (TJ)

Power Max: 560 W

IGBT Type: NPT

Input: Standard

Configuration: Half Bridge

Input Capacitance (Cies) @ Vce: 5.5 nF @ 25 V

Voltage Collector Emitter Breakdown (Max): 1200 V

NTC Thermistor: No

Current Collector (Ic) (Max): 135 A

Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 75A

Current Collector Cutoff (Max): 5 mA

Mounting Type: Chassis Mount

Product Advantages

Reliable and high-performance IGBT module

Wide operating temperature range

High power handling capability

Key Technical Parameters

Operating temperature range: -40°C ~ 150°C

Maximum power: 560 W

IGBT type: NPT

Collector-emitter breakdown voltage: 1200 V

Maximum collector current: 135 A

Quality and Safety Features

RoHS3 compliant

No NTC thermistor

Compatibility

Suitable for a variety of power conversion and control applications

Application Areas

Power conversion

Motor control

Inverters

Welding equipment

Industrial automation

Product Lifecycle

Current product, not nearing discontinuation

Replacement or upgrade options available from IXYS

Key Reasons to Choose This Product

Reliable and robust IGBT module

Wide operating temperature range

High power handling capability

RoHS3 compliance for environmental friendliness

Suitable for a variety of power conversion and control applications