IXEN60N120 - IXYS

Manufacturer Part Number

IXEN60N120

Manufacturer

IXYS Corporation

Introduction

High-performance insulated-gate bipolar transistor (IGBT) module for industrial and power conversion applications.

Product Features and Performance

Optimized for high-speed switching and low conduction losses

Low saturation voltage enables high efficiency

Rugged and reliable design

Compact SOT-227B package

Product Advantages

Robust and reliable performance

Efficient power conversion

Compact size for space-constrained designs

Key Technical Parameters

Voltage Collector Emitter Breakdown (Max): 1200 V

Current Collector (Ic) (Max): 100 A

Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 60A

Current Collector Cutoff (Max): 800 A

Operating Temperature: -40°C ~ 150°C (TJ)

Power Max: 445 W

Quality and Safety Features

Robust construction for industrial environments

Compliance with relevant safety standards

Compatibility

Suitable for a wide range of industrial and power conversion applications

Application Areas

Motor drives

Power supplies

Renewable energy systems

Welding equipment

Industrial automation

Product Lifecycle

Current product offering

Replacement and upgrade options available

Key Reasons to Choose This Product

High-performance and reliable IGBT module

Optimized for efficient power conversion

Compact and space-saving design

Suitable for a variety of industrial applications

Robust and durable construction