Manufacturer Part Number
IXER35N120D1
Manufacturer
IXYS Corporation
Introduction
Discrete Semiconductor Product
Transistors IGBTs Single
Product Features and Performance
ISOPLUS247 package
Through-hole mounting
Operating temperature range: -55°C to 150°C
Power rating: 200W
IGBT type: NPT
Collector-emitter breakdown voltage: 1200V
Collector current (max): 50A
Collector-emitter saturation voltage: 2.8V @ 15V, 35A
Reverse recovery time: 80ns
Gate charge: 150nC
Switching energy: 5.4mJ (on), 2.6mJ (off)
Product Advantages
High power handling capability
High voltage rating
Low saturation voltage
Fast switching speed
Key Technical Parameters
Collector-emitter breakdown voltage: 1200V
Collector current (max): 50A
Collector-emitter saturation voltage: 2.8V @ 15V, 35A
Reverse recovery time: 80ns
Gate charge: 150nC
Switching energy: 5.4mJ (on), 2.6mJ (off)
Quality and Safety Features
Designed for high-reliability applications
Meets industrial safety standards
Compatibility
Suitable for use in various power electronics applications
Application Areas
Power inverters
Motor drives
Welding equipment
Induction heating
Uninterruptible power supplies (UPS)
Product Lifecycle
Currently in production
Availability of replacements or upgrades may depend on market demand
Several Key Reasons to Choose This Product
High power handling capability
High voltage rating
Low saturation voltage
Fast switching speed
Reliable performance in industrial applications
Compatibility with a wide range of power electronics applications