Manufacturer Part Number
IXEL40N400
Manufacturer
IXYS Corporation
Introduction
Discrete Semiconductor Product
Transistor IGBT Single
Product Features and Performance
RoHS3 Compliant
ISOPLUSi5-Pak Packaging
Operating Temperature: -40°C to 150°C (TJ)
Power Rating: 380 W
Collector-Emitter Breakdown Voltage: 4000 V
Collector Current (Ic Max): 90 A
Collector-Emitter Saturation Voltage (Vce(on) Max): 3.2 V @ 15 V, 40 A
Gate Charge: 275 nC
Collector Current Pulsed (Icm): 400 A
Switching Energy: 55 mJ (on), 165 mJ (off)
Turn-on/off Delay Time: 160 ns / 630 ns
Product Advantages
High voltage and current handling capability
Low on-state voltage
Fast switching performance
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 4000 V
Current Collector (Ic) (Max): 90 A
Vce(on) (Max) @ Vge, Ic: 3.2 V @ 15 V, 40 A
Gate Charge: 275 nC
Current Collector Pulsed (Icm): 400 A
Switching Energy: 55 mJ (on), 165 mJ (off)
Td (on/off) @ 25°C: 160 ns / 630 ns
Quality and Safety Features
RoHS3 Compliant
Compatibility
Through Hole Mounting
Application Areas
High power industrial and automotive applications
Product Lifecycle
Current product, no indication of discontinuation
Several Key Reasons to Choose This Product
High voltage and current handling capability
Low on-state voltage for improved efficiency
Fast switching performance for high-speed applications
RoHS3 compliance for environmental responsibility
Through hole mounting for easy integration