IXEH40N120D1 - IXYS

Manufacturer Part Number

IXEH40N120D1

Manufacturer

IXYS Corporation

Introduction

This product is a discrete semiconductor device, specifically a transistor in the form of an Insulated Gate Bipolar Transistor (IGBT).

Product Features and Performance

Power rating of 300 W

Non-Punch Through (NPT) IGBT type

Collector-Emitter Breakdown Voltage of 1200 V

Collector Current (max) of 60 A

Low Collector-Emitter Saturation Voltage of 3 V @ 15 V, 40 A

Fast Reverse Recovery Time of 180 ns

Gate Charge of 150 nC

Switching Energy of 6.1 mJ (on), 3 mJ (off)

Operating Temperature Range of -55°C to 150°C (junction temperature)

Product Advantages

High power handling capability

High voltage rating

Low on-state voltage drop

Fast switching performance

Wide operating temperature range

Key Technical Parameters

Collector-Emitter Breakdown Voltage: 1200 V

Collector Current (max): 60 A

Collector-Emitter Saturation Voltage: 3 V @ 15 V, 40 A

Reverse Recovery Time: 180 ns

Gate Charge: 150 nC

Switching Energy: 6.1 mJ (on), 3 mJ (off)

Quality and Safety Features

Housed in a rugged TO-247AD package

Complies with industry standards and safety requirements

Compatibility

This IGBT is suitable for use in a variety of power conversion and control applications.

Application Areas

Power supplies

Motor drives

Inverters

Converters

Industrial automation equipment

Product Lifecycle

The IXEH40N120D1 is an active product, and IXYS Corporation continues to support it. Replacement or upgrade options may be available for this product.

Key Reasons to Choose This Product

High power handling capability up to 300 W

High voltage rating of 1200 V

Low on-state voltage drop for improved efficiency

Fast switching performance with low switching losses

Wide operating temperature range of -55°C to 150°C

Robust TO-247AD package for reliable operation

Compatibility with various power conversion and control applications