Manufacturer Part Number
MII300-12E4
Manufacturer
IXYS Corporation
Introduction
Discrete Semiconductor Products
Transistors - IGBTs - Modules
Product Features and Performance
IGBT Type: NPT
Input: Standard
Configuration: Half Bridge
Input Capacitance (Cies) @ Vce: 11 nF @ 25 V
Voltage Collector Emitter Breakdown (Max): 1200 V
NTC Thermistor: No
Current Collector (Ic) (Max): 280 A
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 200A
Current Collector Cutoff (Max): 3.3 mA
Mounting Type: Chassis Mount
Product Advantages
High power handling capability up to 1100 W
Wide operating temperature range of -40°C to 150°C (TJ)
Key Technical Parameters
Manufacturer's packaging: Y3-Li
Base Product Number: MII
Package / Case: Y3-Li
Supplier Device Package: Y3-Li
Package: Box
Operating Temperature: -40°C ~ 150°C (TJ)
Power Max: 1100 W
Quality and Safety Features
Meets applicable safety and quality standards
Compatibility
Compatible with a wide range of applications and systems
Application Areas
Suitable for a variety of power electronics applications
Product Lifecycle
Current product, not nearing discontinuation
Replacement or upgrade options available
Several Key Reasons to Choose This Product
High power handling and wide temperature range
Robust and reliable performance
Compatibility with a wide range of applications
Availability of replacement and upgrade options