Manufacturer Part Number
APTGT50DA170D1G
Manufacturer
Microsemi
Introduction
Discrete Semiconductor Product
Transistor IGBT Module
Product Features and Performance
Trench Field Stop IGBT
Standard Input
Single Configuration
Input Capacitance (Cies) of 4.4 nF @ 25 V
Collector-Emitter Breakdown Voltage (Max) of 1700 V
Collector Current (Ic) (Max) of 70 A
Vce(on) (Max) of 2.4 V @ 15 V, 50 A
Collector Cutoff Current (Max) of 6 mA
Operating Temperature Range of -40°C to 150°C (TJ)
Power Rating of 310 W
Product Advantages
RoHS Compliant
Chassis Mount Packaging
Key Technical Parameters
IGBT Type: Trench Field Stop
Input: Standard
Configuration: Single
Input Capacitance (Cies): 4.4 nF @ 25 V
Voltage Collector Emitter Breakdown (Max): 1700 V
Current Collector (Ic) (Max): 70 A
Vce(on) (Max) @ Vge, Ic: 2.4 V @ 15 V, 50 A
Current Collector Cutoff (Max): 6 mA
Power Max: 310 W
Operating Temperature: -40°C to 150°C (TJ)
Quality and Safety Features
RoHS Compliant
Compatibility
Chassis Mount Packaging
Application Areas
Discrete Semiconductor Applications
Product Lifecycle
Current availability, no discontinuation plans
Key Reasons to Choose This Product
Trench Field Stop IGBT technology for high performance
High voltage and current ratings for demanding applications
RoHS compliance for environmental responsibility
Chassis mount packaging for easy integration
Wide operating temperature range for versatility
