Manufacturer Part Number
APTGT50A170D1G
Manufacturer
Microsemi
Introduction
Discrete Semiconductor Product
Transistor IGBT Module
Product Features and Performance
RoHS Compliant
Trench Field Stop IGBT
Standard Input
Half Bridge Configuration
Input Capacitance (Cies) of 4.4 nF @ 25 V
Collector-Emitter Breakdown Voltage (Max) of 1700 V
Collector Current (Ic) (Max) of 70 A
Collector-Emitter Saturation Voltage (Vce(on)) (Max) of 2.4 V @ 15 V, 50 A
Collector Cutoff Current (Max) of 6 mA
Chassis Mount Mounting Type
Product Advantages
High power handling capacity up to 310 W
Robust trench field stop IGBT technology
Suitable for a variety of power conversion applications
Key Technical Parameters
Power Rating: 310 W
IGBT Type: Trench Field Stop
Input Configuration: Standard, Half Bridge
Input Capacitance (Cies): 4.4 nF @ 25 V
Collector-Emitter Breakdown Voltage (Max): 1700 V
Collector Current (Ic) (Max): 70 A
Collector-Emitter Saturation Voltage (Vce(on)) (Max): 2.4 V @ 15 V, 50 A
Collector Cutoff Current (Max): 6 mA
Mounting Type: Chassis Mount
Quality and Safety Features
RoHS Compliant
Compatibility
Suitable for various power conversion applications
Application Areas
Power conversion
Industrial automation
Motor drives
Renewable energy systems
Product Lifecycle
Currently available
No information on discontinuation or replacements/upgrades
Key Reasons to Choose This Product
High power handling capacity up to 310 W
Robust trench field stop IGBT technology for reliable performance
Suitable for a wide range of power conversion applications
RoHS compliant for environmental sustainability
APTGT50SK170D1GMicrosemi CorporationIGBT MODULE 1700V 70A 310W D1