Manufacturer Part Number
APTGT450SK60G
Manufacturer
Microchip Technology
Introduction
Discrete semiconductor product
IGBT (Insulated Gate Bipolar Transistor) module
Product Features and Performance
Trench field stop IGBT technology
Standard input configuration
Single IGBT module
37 nF input capacitance (Cies) at 25 V
600 V collector-emitter breakdown voltage
550 A maximum collector current
8 V maximum collector-emitter voltage drop at 15 V gate voltage, 450 A collector current
500 A maximum collector cut-off current
-40°C to 175°C (TJ) operating temperature range
1750 W maximum power
Product Advantages
High power density
Low conduction and switching losses
Robust and reliable performance
Key Technical Parameters
IGBT type: Trench field stop
Input configuration: Standard
Package: SP6 chassis mount
Quality and Safety Features
RoHS3 compliant
Compatibility
Suitable for a variety of industrial and power electronics applications
Application Areas
Industrial motor drives
Renewable energy systems
Power conversion and control
Product Lifecycle
Current product offering, no discontinuation planned
Replacement or upgrade options may be available
Several Key Reasons to Choose This Product
High-performance trench field stop IGBT technology
Excellent power handling capability
Low losses for improved efficiency
Wide operating temperature range
Robust and reliable design
Compatibility with various industrial applications