APT200GT60JR - Microchip Technology

Manufacturer Part Number

APT200GT60JR

Manufacturer

Microchip Technology

Introduction

High-performance Insulated Gate Bipolar Transistor (IGBT) module

Designed for medium-power industrial and consumer applications

Product Features and Performance

NPT IGBT technology for improved efficiency and ruggedness

Optimized for low conduction and switching losses

Rated for up to 500W of power

Wide operating temperature range of -55°C to 150°C

Product Advantages

Reliable and robust design

Efficient power conversion

Compact and easy to integrate

Key Technical Parameters

Collector-Emitter Voltage (max): 600V

Collector Current (max): 195A

On-state Voltage Drop (max): 2.5V

Input Capacitance: 8.65nF

Quality and Safety Features

RoHS3 compliant

Chassis mount package for secure installation

Compatibility

Suitable for a variety of medium-power industrial and consumer applications

Application Areas

Motor drives

Power inverters

Welding equipment

Induction heating systems

Product Lifecycle

Currently in production

Replacement or upgrade options available from Microchip

Key Reasons to Choose This Product

Efficient and reliable power conversion

Robust and rugged design for demanding environments

Compact package for easy integration

Extensive technical support and availability from Microchip