APT19M120J - Microchip Technology

Manufacturer Part Number

APT19M120J

Manufacturer

Microchip Technology

Introduction

The APT19M120J is a high-voltage, high-power N-channel MOSFET transistor from Microchip Technology. It is part of the POWER MOS 8 series.

Product Features and Performance

Drain to Source Voltage (Vdss) of 1200 V

Maximum Gate-Source Voltage (Vgs) of ±30 V

On-State Resistance (Rds(on)) of 530 mΩ @ 14 A, 10 V

Continuous Drain Current (Id) of 19 A at 25°C

Input Capacitance (Ciss) of 9670 pF @ 25 V

Power Dissipation (Tc) of 545 W

Product Advantages

High voltage and high power handling capabilities

Low on-state resistance for improved efficiency

Suitable for a wide range of high-power, high-voltage applications

Key Technical Parameters

Technology: MOSFET (Metal Oxide)

FET Type: N-Channel

Threshold Voltage (Vgs(th)) of 5 V @ 2.5 mA

Gate Charge (Qg) of 300 nC @ 10 V

Quality and Safety Features

RoHS3 compliant

Housed in a ISOTOP package

Compatibility

Chassis mount package

Application Areas

High-power, high-voltage switching and control applications

Industrial, automotive, and power electronics

Product Lifecycle

This product is actively available and not nearing discontinuation.

Replacement or upgrade options may be available from Microchip Technology.

Key Reasons to Choose This Product

Excellent high-voltage and high-power performance

Low on-state resistance for improved efficiency

Suitable for a wide range of industrial and power electronics applications

Reliable and RoHS-compliant design