APT200GN60J - Microchip Technology

Manufacturer Part Number

APT200GN60J

Manufacturer

Microchip Technology

Introduction

The APT200GN60J is a high-performance IGBT (Insulated Gate Bipolar Transistor) module from Microchip Technology, a leading manufacturer of semiconductor solutions.

Product Features and Performance

Trench Field Stop IGBT technology

Standard input configuration

Single-chip design

High power density of up to 682 W

Wide operating temperature range of -55°C to 175°C (TJ)

Low input capacitance of 14.1 nF @ 25 V

High collector-emitter breakdown voltage of 600 V

High collector current rating of 283 A

Low collector-emitter saturation voltage of 1.85 V @ 15 V, 200 A

Product Advantages

Excellent power handling capabilities

Reliable and efficient performance

Compact and space-saving design

Suitable for a wide range of applications

Key Technical Parameters

IGBT Type: Trench Field Stop

Input: Standard

Configuration: Single

Input Capacitance (Cies) @ Vce: 14.1 nF @ 25 V

Voltage Collector Emitter Breakdown (Max): 600 V

NTC Thermistor: No

Current Collector (Ic) (Max): 283 A

Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 200A

Current Collector Cutoff (Max): 25 A

Mounting Type: Chassis Mount

Quality and Safety Features

RoHS3 compliant

Manufacturer's packaging: ISOTOP

Compatibility

ISOTOP package

Application Areas

Suitable for use in a wide range of power electronics applications, such as motor drives, inverters, and power conversion systems.

Product Lifecycle

The APT200GN60J is currently an active product and is not nearing discontinuation. Replacements and upgrades may be available in the future as technology evolves.

Key Reasons to Choose This Product

High power density and efficient performance

Reliable and robust design for demanding applications

Wide operating temperature range for versatile use

Compact and space-saving packaging

RoHS3 compliance for environmental sustainability