IXUN350N10 - IXYS

Manufacturer Part Number

IXUN350N10

Manufacturer

IXYS Corporation

Introduction

High-performance N-channel MOSFET transistor

Designed for high-power applications

Product Features and Performance

Continuous drain current (Id) of 350A at 25°C case temperature

Drain-to-source voltage (Vdss) of 100V

On-state resistance (Rds(on)) of 2.5mΩ at 175A, 10V

Operating temperature range of -55°C to 150°C

Input capacitance (Ciss) of 27,000pF at 25V

Power dissipation (Ptot) of 830W at 25°C case temperature

Product Advantages

Excellent performance in high-power, high-current applications

Low on-state resistance for improved efficiency

Wide operating temperature range

Robust design for reliable operation

Key Technical Parameters

Drain-to-source voltage (Vdss): 100V

Gate-to-source voltage (Vgs): ±20V

On-state resistance (Rds(on)): 2.5mΩ @ 175A, 10V

Continuous drain current (Id): 350A at 25°C case temperature

Input capacitance (Ciss): 27,000pF at 25V

Power dissipation (Ptot): 830W at 25°C case temperature

Quality and Safety Features

Robust design for high reliability

Complies with relevant safety standards

Compatibility

Suitable for a wide range of high-power, high-current applications

Application Areas

Automotive electronics

Industrial motor drives

Switching power supplies

Inverters and converters

Product Lifecycle

The IXUN350N10 is an active and widely available product

Replacement or upgrade options may be available from the manufacturer

Key Reasons to Choose This Product

Excellent performance in high-power, high-current applications

Low on-state resistance for improved efficiency

Wide operating temperature range

Robust design for reliable operation

Compatibility with a wide range of high-power applications