Manufacturer Part Number
SI4464DY-T1-E3
Manufacturer
Vishay / Siliconix
Introduction
High-performance N-channel enhancement-mode power MOSFET in a surface-mount 8-SOIC package.
Product Features and Performance
200 V drain-to-source voltage
240 mΩ maximum on-resistance at 2.2 A, 10 V
7 A continuous drain current at 25 °C
5 W maximum power dissipation
-55 °C to 150 °C operating temperature range
Product Advantages
Low on-resistance for high efficiency
High power density
Suitable for a wide range of applications
Key Technical Parameters
Drain-to-source voltage (Vdss): 200 V
Gate-to-source voltage (Vgs): ±20 V
On-resistance (Rds(on)): 240 mΩ @ 2.2 A, 10 V
Continuous drain current (Id): 1.7 A @ 25 °C
Power dissipation (Pd): 1.5 W @ 25 °C
Quality and Safety Features
RoHS3 compliant
ESD protection
Compatibility
Compatible with a wide range of electronic circuits and systems that require high-performance power MOSFETs.
Application Areas
Switching power supplies
Motor drives
Industrial and consumer electronics
Automotive electronics
Product Lifecycle
This product is an active and widely used power MOSFET. Replacements and upgrades are readily available from Vishay and other manufacturers.
Key Reasons to Choose This Product
High voltage rating (200 V)
Low on-resistance for high efficiency
High power density in a small package
Wide operating temperature range
RoHS compliance for environmental responsibility
Proven reliability and performance in a variety of applications