Manufacturer Part Number
SI4464DY-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
High-performance N-channel TrenchFET power MOSFET
Product Features and Performance
Drain-to-source voltage (Vdss) up to 200V
Low on-resistance (Rds(on)) down to 240mΩ
Continuous drain current (Id) up to 1.7A at 25°C
Power dissipation (Pd) up to 1.5W at 25°C
Fast switching speed
Rugged and reliable design
Product Advantages
Excellent power conversion efficiency
Compact surface-mount package
Wide operating temperature range (-55°C to 150°C)
Suitable for various power management applications
Key Technical Parameters
Drain-to-source voltage (Vdss): 200V
Gate-to-source voltage (Vgs): ±20V
On-resistance (Rds(on)): 240mΩ @ 2.2A, 10V
Threshold voltage (Vgs(th)): 4V @ 250μA
Gate charge (Qg): 18nC @ 10V
Quality and Safety Features
RoHS3 compliant
Reliable and durable design
Compatibility
Compatible with various power management and control applications
Application Areas
Power supplies
Motor drives
Lighting control
Industrial automation
Telecommunications equipment
Product Lifecycle
Current product
Replacement and upgrade options available
Key Reasons to Choose This Product
Excellent power efficiency
Compact and reliable design
Wide operating temperature range
Suitable for a variety of power management applications
Proven performance and quality