Manufacturer Part Number
SI4465ADY-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
P-Channel TrenchFET MOSFET Transistor
Product Features and Performance
Extremely low on-resistance
High current capability
Fast switching speed
Rugged and reliable design
Suitable for high power and high frequency applications
Product Advantages
Optimal power efficiency
Improved thermal management
Reduced system size and weight
Increased system reliability
Key Technical Parameters
Drain to Source Voltage (Vdss): 8 V
Gate to Source Voltage (Vgs): ±8 V
On-resistance (Rds(on)): 9 mΩ @ 14 A, 4.5 V
Continuous Drain Current (Id): 13.7 A (Ta), 20 A (Tc)
Power Dissipation: 3 W (Ta), 6.5 W (Tc)
Gate Charge (Qg): 85 nC @ 4.5 V
Quality and Safety Features
RoHS3 compliant
Suitable for harsh environments (-55°C to 150°C)
Compatibility
Surface mount 8-SOIC package
Tape & Reel (TR) packaging
Application Areas
Switching power supplies
DC-DC converters
Motor drives
Industrial and consumer electronics
Product Lifecycle
Current product offering
No plans for discontinuation
Replacement and upgrade options available
Key Reasons to Choose This Product
Exceptional power efficiency and thermal performance
High current capability and fast switching
Robust and reliable design for harsh environments
Ease of integration and compatibility with various applications