Manufacturer Part Number
SI4463CDY-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor Product
Single Transistor FET, MOSFET
Product Features and Performance
ROHS3 Compliant
Surface Mount Packaging
TrenchFET Series
Tape & Reel Packaging
Operating Temperature: -55°C to 150°C
Drain to Source Voltage: 20V
Maximum Gate-Source Voltage: ±12V
Very Low On-Resistance: 8mΩ @ 13A, 10V
High Continuous Drain Current: 13.6A (Ta), 49A (Tc)
Low Input Capacitance: 4250pF @ 15V
High Power Dissipation: 2.7W (Ta), 5W (Tc)
P-Channel MOSFET
Low Threshold Voltage: 1.4V @ 250A
Drive Voltage Range: 2.5V to 10V
Low Gate Charge: 162nC @ 10V
Product Advantages
Excellent performance in power management and control applications
Compact surface mount package
Suitable for high-current, high-power density designs
Key Technical Parameters
Drain to Source Voltage: 20V
Maximum Gate-Source Voltage: ±12V
On-Resistance: 8mΩ
Continuous Drain Current: 13.6A (Ta), 49A (Tc)
Input Capacitance: 4250pF
Power Dissipation: 2.7W (Ta), 5W (Tc)
Threshold Voltage: 1.4V
Drive Voltage Range: 2.5V to 10V
Gate Charge: 162nC
Quality and Safety Features
ROHS3 Compliant
Suitable for harsh environments with wide temperature range
Compatibility
Compatible with various power management and control applications
Application Areas
Power management
Motor control
Power conversion
Switching regulators
Battery chargers
Industrial and consumer electronics
Product Lifecycle
Currently in production
No planned discontinuation
Replacement and upgrade options available
Key Reasons to Choose This Product
Excellent performance characteristics for power management and control
Compact surface mount package for space-constrained designs
Suitable for high-current, high-power density applications
Wide temperature range and ROHS3 compliance for reliability in harsh environments
Compatibility with a variety of power management and control applications