Manufacturer Part Number
SI4463BDY-T1-E3
Manufacturer
Vishay / Siliconix
Introduction
Vishay's SI4463BDY-T1-E3 is a P-Channel MOSFET transistor designed for efficient power switching and control applications.
Product Features and Performance
20V Drain-to-Source Voltage (Vdss)
±12V Gate-to-Source Voltage (Vgs)
11mΩ Maximum On-Resistance (Rds(on)) at 13.7A, 10V
8A Continuous Drain Current (Id) at 25°C
5W Maximum Power Dissipation
Product Advantages
Low on-resistance for improved efficiency
Fast switching speed
High current handling capability
Wide operating temperature range
Key Technical Parameters
MOSFET Technology: Trench
FET Type: P-Channel
Threshold Voltage (Vgs(th)): 1.4V at 250μA
Gate Charge (Qg): 56nC at 4.5V
Quality and Safety Features
RoHS3 compliant
8-SOIC surface mount package
Compatibility
Suitable for use in a variety of power switching and control applications.
Application Areas
Power supplies
Motor drives
Battery chargers
Lighting control
Industrial automation
Product Lifecycle
This product is an active and widely available part. Replacements and upgrades may be available from Vishay or authorized distributors.
Key Reasons to Choose This Product
Excellent power efficiency due to low on-resistance
Robust design for high current and temperature operation
Compact surface mount package for space-constrained designs
RoHS compliance for use in environmentally-sensitive applications