Manufacturer Part Number
SI4463BDY-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
The SI4463BDY-T1-GE3 is a high-performance P-channel MOSFET transistor from Vishay Siliconix.
Product Features and Performance
Trench MOSFET technology for high efficiency and low on-resistance
Capable of handling continuous drain current up to 9.8A at 25°C
Low on-resistance of 11mOhm at 13.7A, 10V
Wide operating temperature range of -55°C to 150°C
Fast switching capability with low gate charge of 56nC at 4.5V
Product Advantages
Excellent power efficiency and heat dissipation
High current handling capability
Reliable operation across wide temperature range
Efficient switching performance
Key Technical Parameters
Drain to Source Voltage (Vdss): 20V
Gate to Source Voltage (Vgs Max): ±12V
Power Dissipation (Max): 1.5W
Threshold Voltage (Vgs(th) Max): 1.4V at 250µA
Quality and Safety Features
RoHS3 compliant
8-SOIC surface mount package
Tape and reel packaging for automated assembly
Compatibility
This MOSFET can be used in a variety of power electronics applications that require a high-performance P-channel transistor.
Application Areas
Switch-mode power supplies
Motor drives
Voltage regulators
Battery charging circuits
General power management applications
Product Lifecycle
The SI4463BDY-T1-GE3 is an active product and there are no indications of it being discontinued. Replacements and upgrades may be available from Vishay Siliconix.
Key Reasons to Choose This Product
Excellent power efficiency and thermal performance
High current handling capability
Reliable operation across wide temperature range
Fast switching speed and low gate charge for efficient power conversion
RoHS3 compliance for use in modern electronic systems