Manufacturer Part Number
FDMS004N08C
Manufacturer
onsemi
Introduction
High-performance N-channel MOSFET transistor suitable for power switching and power management applications
Product Features and Performance
80V drain-to-source voltage
4mΩ maximum on-resistance at 44A, 10V
126A maximum continuous drain current at 25°C
Wide -55°C to 150°C operating temperature range
Low input capacitance of 4250pF at 40V
Maximum power dissipation of 125W at 25°C
Product Advantages
Excellent on-resistance and high current handling capability
Suitable for high-power, high-efficiency switching applications
Compact 8-PQFN (5x6) package with low thermal resistance
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 80V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 4mΩ @ 44A, 10V
Continuous Drain Current (Id): 126A @ 25°C
Input Capacitance (Ciss): 4250pF @ 40V
Power Dissipation (Pd): 125W @ 25°C
Quality and Safety Features
RoHS3 compliant
Suitable for high-reliability applications
Compatibility
Suitable for a wide range of power management and switching applications
Application Areas
Power supplies
Motor drives
Inverters
Servo amplifiers
Industrial automation
Telecommunication equipment
Product Lifecycle
Current product, no indication of discontinuation
Replacements and upgrades available from the manufacturer
Key Reasons to Choose This Product
High current handling and low on-resistance for efficient power switching
Compact package with low thermal resistance for space-constrained designs
Wide operating temperature range for reliable performance in demanding environments
RoHS3 compliance for use in environmentally-conscious applications