Manufacturer Part Number
FDMS003N08C
Manufacturer
onsemi
Introduction
N-Channel power MOSFET in Power56 package
Designed for high-frequency, high-power applications
Product Features and Performance
80V Drain-Source Voltage (Vdss)
1 mΩ max On-Resistance (RDS(on))
22A Continuous Drain Current (ID) at 25°C
147A Continuous Drain Current (ID) at 100°C
5350 pF max Input Capacitance (Ciss)
73 nC max Gate Charge (Qg)
Suitable for high-frequency, high-power switching applications
Product Advantages
Low on-resistance for high efficiency
High power density
Robust power handling capability
Reliable performance across wide temperature range
Key Technical Parameters
Drain-Source Voltage (Vdss): 80V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (RDS(on)): 3.1 mΩ max
Continuous Drain Current (ID): 22A at 25°C, 147A at 100°C
Input Capacitance (Ciss): 5350 pF max
Gate Charge (Qg): 73 nC max
Quality and Safety Features
RoHS 3 compliant
Designed for reliable operation across -55°C to 150°C temperature range
Compatibility
Suitable for high-frequency, high-power switching applications
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Class-D audio amplifiers
Industrial equipment
Product Lifecycle
Currently in production
No known plans for discontinuation
Replacement or upgrade options available if needed
Key Reasons to Choose This Product
Excellent power handling and efficiency due to low on-resistance
Robust design for reliable performance across wide temperature range
Compact Power56 package for high power density
Suitable for a wide range of high-frequency, high-power switching applications