Manufacturer Part Number
IXTA26P20P
Manufacturer
IXYS Corporation
Introduction
Discrete Semiconductor Product
Transistor FET, MOSFET Single
Product Features and Performance
RoHS3 Compliant
TO-263AA Package
Polar Series
TO-263-3, DPak (2 Leads + Tab), TO-263AB Package
Tube Packaging
Operating Temperature: -55°C to 175°C (TJ)
Drain to Source Voltage (Vdss): 200V
Vgs (Max): ±20V
Rds On (Max) @ Id, Vgs: 170mOhm @ 13A, 10V
MOSFET (Metal Oxide) Technology
Current Continuous Drain (Id) @ 25°C: 26A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2740pF @ 25V
Power Dissipation (Max): 300W (Tc)
P-Channel FET Type
Vgs(th) (Max) @ Id: 4V @ 250A
Drive Voltage (Max Rds On, Min Rds On): 10V
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
Surface Mount Mounting Type
Product Advantages
High power rating
Low on-resistance
Wide operating temperature range
Suitable for high-power, high-voltage applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 200V
Rds On (Max) @ Id, Vgs: 170mOhm @ 13A, 10V
Current Continuous Drain (Id) @ 25°C: 26A (Tc)
Power Dissipation (Max): 300W (Tc)
Quality and Safety Features
RoHS3 Compliant
Compatibility
Suitable for high-power, high-voltage applications
Application Areas
Power conversion and control circuits
Motor drives
Power supplies
Industrial electronics
Product Lifecycle
The product is currently available and not nearing discontinuation.
Replacement or upgrade options may be available from the manufacturer.
Key Reasons to Choose This Product
High power rating up to 300W
Low on-resistance of 170mOhm
Wide operating temperature range of -55°C to 175°C
Suitable for high-power, high-voltage applications
RoHS3 compliant for environmental compliance
IXTA200N055IXYS / Littelfuse