IXTA1N120P - IXYS

Manufacturer Part Number

IXTA1N120P

Manufacturer

IXYS Corporation

Introduction

The IXTA1N120P is a discrete semiconductor product, specifically a single N-Channel MOSFET transistor.

Product Features and Performance

High drain-source voltage rating of 1200 V

Low on-resistance of 20 Ω at 500 mA, 10 V

Wide operating temperature range of -55°C to 150°C

Input capacitance (Ciss) of 550 pF at 25 V

Maximum continuous drain current of 1 A at 25°C

Maximum power dissipation of 63 W at Tc (case temperature)

Product Advantages

Suitable for high-voltage, high-power applications

Excellent performance characteristics for efficient power conversion and control

Robust design for reliable operation in harsh environments

Key Technical Parameters

Drain-Source Voltage (Vdss): 1200 V

Gate-Source Voltage (Vgs): ±20 V

On-Resistance (Rds(on)): 20 Ω @ 500 mA, 10 V

Continuous Drain Current (Id): 1 A @ 25°C

Power Dissipation (Pd): 63 W @ Tc

Quality and Safety Features

RoHS3 compliant design

Housed in a TO-263-3 (DPak) surface mount package

Compatibility

Suitable for various high-voltage, high-power applications, such as power supplies, motor drives, and industrial controls

Application Areas

Power conversion and control

Switching power supplies

Motor drives

Industrial automation and control

Product Lifecycle

This product is an active and available part from the manufacturer.

Replacements and upgrades may be available, depending on the specific application requirements.

Key Reasons to Choose This Product

Excellent high-voltage and high-power handling capabilities

Low on-resistance for efficient power conversion

Wide operating temperature range for reliable performance in harsh environments

Surface mount package for easy integration into compact designs

RoHS3 compliance for environmentally-friendly applications