Manufacturer Part Number
IXTA180N10T
Manufacturer
IXYS Corporation
Introduction
High-performance N-channel MOSFET with low on-resistance and high current capability
Product Features and Performance
Trench MOSFET technology
Low on-resistance of 6.4 mΩ at 25 A, 10 V
High current capability of 180 A continuous drain current at 25°C
Wide operating temperature range of -55°C to 175°C (junction temperature)
Low gate charge of 151 nC at 10 V
Fast switching speed
Product Advantages
Excellent thermal performance and power handling
Efficient power conversion and control
Reliable and durable operation
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 100 V
Gate-to-Source Voltage (Vgs): ±30 V
Input Capacitance (Ciss): 6900 pF at 25 V
Power Dissipation (Tc): 480 W
Quality and Safety Features
RoHS3 compliant
Manufactured in an ISO-certified facility
Compatibility
Compatible with a wide range of power electronics applications
Application Areas
Motor drives
Power supplies
Inverters
Converters
Industrial and consumer electronics
Product Lifecycle
Current production model
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
Excellent power handling and thermal performance
Efficient power conversion and control
Reliable and durable operation
Compatibility with a wide range of applications
Cost-effective solution for high-power applications
IXTA180N10T7IXYSMOSFET N-CH 100V 180A TO263-7
IXTA180N10T7 TRLIXYS / Littelfuse