IXTA1R4N120P - IXYS

Manufacturer Part Number

IXTA1R4N120P

Manufacturer

IXYS Corporation

Introduction

This product is a discrete semiconductor device, specifically a transistor - FET, MOSFET - Single.

Product Features and Performance

N-Channel MOSFET

Drain to Source Voltage (Vdss) of 1200 V

Maximum Gate-Source Voltage (Vgs) of ±20 V

On-Resistance (Rds(on)) of 13 Ohm @ 500 mA, 10 V

Continuous Drain Current (Id) of 1.4 A at 25°C (Tc)

Input Capacitance (Ciss) of 666 pF @ 25 V

Maximum Power Dissipation of 86 W at 25°C (Tc)

Operating Temperature range of -55°C to 150°C (TJ)

Product Advantages

High voltage rating

Low on-resistance

Compact surface mount package

Key Technical Parameters

Drain to Source Voltage (Vdss): 1200 V

Maximum Gate-Source Voltage (Vgs): ±20 V

On-Resistance (Rds(on)): 13 Ohm @ 500 mA, 10 V

Continuous Drain Current (Id): 1.4 A at 25°C (Tc)

Input Capacitance (Ciss): 666 pF @ 25 V

Maximum Power Dissipation: 86 W at 25°C (Tc)

Operating Temperature range: -55°C to 150°C (TJ)

Quality and Safety Features

RoHS3 compliant

Compatibility

TO-263-3, DPak (2 Leads + Tab), TO-263AB package

Application Areas

Suitable for high voltage switching and power management applications

Product Lifecycle

This product is currently available and not nearing discontinuation.

Replacement or upgrade options may be available from the manufacturer.

Key Reasons to Choose This Product

High voltage rating up to 1200 V

Low on-resistance for efficient power handling

Compact surface mount package for space-constrained designs

Wide operating temperature range of -55°C to 150°C

RoHS3 compliant for environmental compliance