Manufacturer Part Number
IXTA1R4N120P
Manufacturer
IXYS Corporation
Introduction
This product is a discrete semiconductor device, specifically a transistor - FET, MOSFET - Single.
Product Features and Performance
N-Channel MOSFET
Drain to Source Voltage (Vdss) of 1200 V
Maximum Gate-Source Voltage (Vgs) of ±20 V
On-Resistance (Rds(on)) of 13 Ohm @ 500 mA, 10 V
Continuous Drain Current (Id) of 1.4 A at 25°C (Tc)
Input Capacitance (Ciss) of 666 pF @ 25 V
Maximum Power Dissipation of 86 W at 25°C (Tc)
Operating Temperature range of -55°C to 150°C (TJ)
Product Advantages
High voltage rating
Low on-resistance
Compact surface mount package
Key Technical Parameters
Drain to Source Voltage (Vdss): 1200 V
Maximum Gate-Source Voltage (Vgs): ±20 V
On-Resistance (Rds(on)): 13 Ohm @ 500 mA, 10 V
Continuous Drain Current (Id): 1.4 A at 25°C (Tc)
Input Capacitance (Ciss): 666 pF @ 25 V
Maximum Power Dissipation: 86 W at 25°C (Tc)
Operating Temperature range: -55°C to 150°C (TJ)
Quality and Safety Features
RoHS3 compliant
Compatibility
TO-263-3, DPak (2 Leads + Tab), TO-263AB package
Application Areas
Suitable for high voltage switching and power management applications
Product Lifecycle
This product is currently available and not nearing discontinuation.
Replacement or upgrade options may be available from the manufacturer.
Key Reasons to Choose This Product
High voltage rating up to 1200 V
Low on-resistance for efficient power handling
Compact surface mount package for space-constrained designs
Wide operating temperature range of -55°C to 150°C
RoHS3 compliant for environmental compliance