Manufacturer Part Number
IXTA36N30P
Manufacturer
IXYS Corporation
Introduction
Discrete Semiconductor Product
Transistor FET, MOSFET Single
Product Features and Performance
N-Channel MOSFET
300V Drain to Source Voltage
110mOhm Max On-Resistance @ 18A, 10V
36A Continuous Drain Current @ 25°C
2250pF Max Input Capacitance @ 25V
300W Max Power Dissipation @ Tc
-55°C to 150°C Operating Temperature Range
Product Advantages
High Voltage and Current Handling Capabilities
Low On-Resistance for Efficient Power Switching
Wide Operating Temperature Range
Key Technical Parameters
Vgs (Max): ±30V
Vgs(th) (Max) @ Id: 5.5V @ 250A
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10V
Quality and Safety Features
RoHS3 Compliant
TO-263AA Manufacturer's Packaging
Compatibility
TO-263-3, DPak (2 Leads + Tab), TO-263AB Package
PolarHT Series
Application Areas
Power Supplies
Motor Drives
Inverters
Industrial Electronics
Product Lifecycle
Actively Available
Replacement/Upgrade Options May Be Available
Key Reasons to Choose
High Power and Voltage Handling
Low On-Resistance for Efficient Performance
Wide Operating Temperature Range
Reliable and RoHS-Compliant Construction